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38th International Conference on Advanced Nanotechnology

Rome, Italy

Jun Hee Lee

Jun Hee Lee

Ulsan National Institute of Science & Technology, South Korea

Title: Atomic semiconductor via flat phonon bands in HfO

Biography

Biography: Jun Hee Lee

Abstract

Flat energy bands in the momentum space of electrons were known to generate spatially localized states and produce unconventional phenomena such as graphene superconductivity. However, flat bands in a phonon had not been discovered yet. We were the first to discover that they exist in a ferroelectric HfO2 and produce localized polar displacement of individual atomic layers. Strikingly, this atomic layer is freely displaced by external voltage for the densest information storage. Our theory of atom control directly in solid is applicable to the Si-compatible HfO2 , so can be materialized in most electronic devices reaching up to ~100 TB memories.